发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.</p> |
申请公布号 |
WO2009139282(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
WO2009JP58110 |
申请日期 |
2009.04.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;OIKAWA, YOSHIAKI;EGUCHI, SHINGO;YAMAZAKI, SHUNPEI |
发明人 |
OIKAWA, YOSHIAKI;EGUCHI, SHINGO;YAMAZAKI, SHUNPEI |
分类号 |
H01L21/02;G06K19/07;G06K19/077;H01L21/3205;H01L21/336;H01L21/822;H01L23/29;H01L23/31;H01L23/52;H01L27/04;H01L27/08;H01L27/12;H01L29/786 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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