发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.</p>
申请公布号 WO2009139282(A1) 申请公布日期 2009.11.19
申请号 WO2009JP58110 申请日期 2009.04.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;OIKAWA, YOSHIAKI;EGUCHI, SHINGO;YAMAZAKI, SHUNPEI 发明人 OIKAWA, YOSHIAKI;EGUCHI, SHINGO;YAMAZAKI, SHUNPEI
分类号 H01L21/02;G06K19/07;G06K19/077;H01L21/3205;H01L21/336;H01L21/822;H01L23/29;H01L23/31;H01L23/52;H01L27/04;H01L27/08;H01L27/12;H01L29/786 主分类号 H01L21/02
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