| 摘要 |
<p>A semiconductor device has a plurality of transistors arranged in parallel in a gate length direction, constituting a transistor group wherein adjacent source electrodes are connected and adjacent drain electrodes are also connected. The transistor group has one or more source lead-out lines and one or more drain lead-out lines, and the source lead-out lines and the drain lead-out lines are extracted in the direction vertical to the gate length direction, respectively, to the outside of the transistor group.</p> |
