| 摘要 |
PROBLEM TO BE SOLVED: To reduce unevenness of transistor characteristics of a thin film transistor which uses a crystallized semiconductor layer for a channel region. SOLUTION: The thin film transistor 1 is characterized in thatΔL2 is longer thanΔL1 and a source-side contact length CT2 is longer than a drain-side contact length CT1, whereΔL1 is the distance from an end of the crystallized semiconductor layer 13 which comes into contact with a drain electrode 15b to a position of a gate electrode 11 which corresponds to an end on the side of the drain electrode 15b,ΔL2 is the distance from an end of the crystallized semiconductor layer 13 which comes into contact with a source electrode 15b to a position of the gate electrode 11 which corresponds to an end on the side of the source electrode 15b, CT1 is the drain-side contact length of an impurity-doped layer 14a on the side of the drain electrode 15a which contacts the crystallized semiconductor layer 13 and CT2 is the source-side contact length of an impurity-doped layer 14b on the side of the source electrode 15b which contacts the crystallized semiconductor layer 13. COPYRIGHT: (C)2010,JPO&INPIT
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