发明名称 SEMICONDUCTOR DEVICE FOR IMPROVING THE NOISE OF POWER
摘要 A semiconductor device with improved power noise is provided to embody stabilized power noise reducing effect with respect to frequencies by forming a stub for removing power noise in addition to a printed circuit board. An electrical device is formed on a first power plate(104). The first power plate is covered with a second insulation layer(106). One or more stubs(112) of a fan shape are formed on the second insulation layer, electrically connected to the first power plate through a via contact(108) penetrating the second insulation layer. The via contact can vertically be formed with respect to the first power plate. The stubs can be extended radially with respect to the via contact.
申请公布号 KR100800488(B1) 申请公布日期 2008.02.04
申请号 KR20060132028 申请日期 2006.12.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, KI JAE
分类号 H01L21/28;H01L21/00 主分类号 H01L21/28
代理机构 代理人
主权项
地址
您可能感兴趣的专利