| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method of the same are provided to form a transistor having light transmitting property and a capacitive element. CONSTITUTION: A semiconductor device includes a gate line, a gate insulating layer, a semiconductor film, a source wiring, an interlayer insulating film, a pixel electrode, and a capacity wiring. The gate line includes the gate electrode, and the gate insulating layer covers at least a gate electrode. An island shape of the semiconductor film(112) is installed on the gate insulating layer. The source wiring includes the source electrode, and the interlayer insulating film covers the island shape and the source wiring including the source electrode.</p> |
