METHODE OF FORMING THIN FILM PATTERN

摘要

PURPOSE: A method of forming a thin film pattern is provided to increase etching selectivity ratio of the thin film pattern by using two kinds of amorphous carbon layers when forming a film pattern having critical dimension below 50nm. CONSTITUTION: In a method for fabricating a thin film pattern, a first and a second amorphous carbon layer(131, 133) and a silicon layer and a photosensitive layer are successively laminated on a thin film layer(120), which is a target layer on a substrate(100). The photosensitive pattern is formed by using a photosensitive layer as a mask, and a silicon pattern is formed by etching the silicon layer with the photosensitive pattern as a mask. A first and the second amorphous carbon pattern are formed by etching the first and the second amorphous carbon layer with the silicon pattern as a mask. The thin film pattern is formed by etching the thin film with the first and the second amorphous carbon pattern as a mask.