| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which has oxygen barrier properties and hydrogen barrier properties and simplifies the structure of a ferroelectric capacitor and is manufactured in an easy method, and a method of manufacturing the same. <P>SOLUTION: The ferroelectric memory device has a conductive barrier film 1 connected to a plug electrode 24, a lower electrode 2 disposed on the conductive barrier film 1 and connected to a plug electrode 24 through the conductive barrier film 1, a ferroelectric film 3 disposed on the lower electrode 2, an upper electrode 4 disposed on the ferroelectric film 3, a conductive hydrogen barrier film 5 disposed on the upper electrode 4, a VIA electrode 26 disposed on the conductive hydrogen barrier film 5 and connected to the upper electrode 4 through the conductive hydrogen barrier film 5, and an insulating hydrogen barrier film 6 disposed on the conductive hydrogen barrier film 5 and also on sidewalls of the conductive barrier film 1, lower electrode 2, ferroelectric film 3, upper electrode 4, and conductive hydrogen barrier film 5. <P>COPYRIGHT: (C)2010,JPO&INPIT |
