发明名称 EXTERNAL ELECTRODE FORMING METHOD OF TANTALUM CAPACITOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a plating method for forming an external electrode of a tantalum capacitor. Ž<P>SOLUTION: An external electrode forming method of a tantalum capacitor includes: a step of performing preprocessing using a fluoride on a surface of a molding material of the tantalum capacitor; a step of performing primary catalyst processing on an end part-side surface of an anode wire exposed to the surface of the molding material by a catalyst processing liquid containing palladium; a step of performing secondary catalyst processing on the surface of the molding material around the end part of the anode wire by a catalyst processing liquid containing palladium; and a step of providing a nickel plating film on surfaces of the anode wire and the molding material. This method has advantages of satisfactorily maintaining electric characteristics of a capacitor element and of allowing the increase in volume efficiency of the capacitor element for ensuring an electrostatic capacity of the tantalum capacitor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009272598(A) 申请公布日期 2009.11.19
申请号 JP20080209058 申请日期 2008.08.14
申请人 SAMSUNG ELECTRO MECH CO LTD 发明人 JUNG HA YONG;LEE YEOUNG JIN;JEON JAE YOUNG;CHOI HEE SUNG;SHIN HYUN HO;WON SUNG HAN;LEE SEONG-JAE
分类号 H01G9/012 主分类号 H01G9/012
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