发明名称 METHOD FOR MANUFACTURING ACTUATOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an actuator device which controls deformation of a substrate, being formed in the initial stage of a manufacturing process and having a significant impact on the subsequent process, such that the impact on the process for forming a piezoelectric element is minimized. <P>SOLUTION: An insulator film 55 consisting of zirconium oxide is formed on an elastic layer 50 (silicon dioxide film 51) by carrying out thermal oxidation of a zirconium layer, and then annealing of the insulator film 55 is carried out at a temperature below the highest temperature when thermal oxidation of the zirconium layer is carrier out. Deformation of a wafer 110 for a channel formation substrate is regulated in the initial process by changing the conditions in annealing such as the temperature, time period, or the like, thus guiding or minimizing deformation of the wafer 110 for a channel formation substrate to a desired range in a process for forming a piezoelectric element. At the same time, deformation of the wafer 110 for a channel formation substrate is guided or minimized to a desired range in a process for etching an ink channel by regulating deformation of the wafer 110 for a channel formation substrate in the initial process. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009272329(A) 申请公布日期 2009.11.19
申请号 JP20080118900 申请日期 2008.04.30
申请人 SEIKO EPSON CORP 发明人 UMEDA KATSUMI
分类号 H01L41/09;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/145;B41J2/16;H01L41/18;H01L41/22;H01L41/39 主分类号 H01L41/09
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