发明名称 DEVICE AND METHOD OF DRIVING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To attain compatibility in suppression of heat generation and secure reliability at switching, and in the drive circuit of a switching device and an electric power converter. <P>SOLUTION: A voltage-driving type drive device for a switching element is provided that is electrically connected with a gate electrode of the switching element. The device is constituted of a drive circuit part that applies a gate voltage to the gate electrode, a voltage detecting part that detects the gate voltage applied to the gate electrode; a voltage change ratio detecting part that detects a change ratio of the gate voltage applied to the gate electrode; and a control circuit part that controls the drive circuit part, based on the detection results of the voltage detecting part and on the voltage change ratio detecting part to control the drive circuit part so that a gate voltage applied to the gate electrode is changed. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009273071(A) 申请公布日期 2009.11.19
申请号 JP20080124164 申请日期 2008.05.12
申请人 HITACHI LTD 发明人 HAKUGASHIRA TAKUMA;SAKURAI NAOKI;YURA MASASHI
分类号 H03K17/56;H02M1/08;H02M7/48;H03K17/08;H03K17/16 主分类号 H03K17/56
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