| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a high quality silicon single crystal by precisely controlling the interstitial oxygen concentration in a silicon single crystal grown by an HMCZ (Horizontal Magnetic field applied CZ) method with high precision, and to provide an apparatus for manufacturing the silicon single crystal. Ž<P>SOLUTION: The method for manufacturing the silicon single crystal by the horizontal magnetic field applied CZ (Czochralski) method comprises pulling a single crystal 3 while applying a horizontal magnetic field to a melt 2 of a silicon raw material accommodated in a quartz crucible 5a by a magnetic field applying device 10. In the method for manufacturing the silicon single crystal, after measuring the central position of the magnetic field generated by the magnetic field applying device 10 and performing the alignment of the measured central position of the magnetic field and the pulling axis being a rotation axis of the single crystal 3, the single crystal 3 is pulled. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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