METHOD FOR SEPARATING SEMICONDUCTOR FROM SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for separating a semiconductor from a substrate. SOLUTION: The method comprises the steps of: forming a plurality of columns on a substrate; epitaxially growing a semiconductor layer on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method can enhance the etching efficiency of separating the semiconductor layer from the substrate layer and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above substrate. COPYRIGHT: (C)2010,JPO&INPIT