VERTICAL LIGHT EMITTING DIODE PACKAGE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A vertical light emitting diode package and a fabrication method thereof are provided to implement thermal conductivity in comparison with a price by laminating a ceramic substrate with a via hole in it on a semiconductor layer and removing a sapphire substrate having low thermal conductance. CONSTITUTION: A vertical type light-emitting diode package includes a light emitting diode, an ohmic contact layer, a bonding metal layer, and a ceramic substrate. A texturing structure in a lower-part of the light emitting diode(210), and the light emitting diode includes the semiconductor layer and the active layer which are different type. The light emitting diode has an inverted mesa structure or a mesa structure, and the ohmic contact layer(220) is laminated on the light emitting diode. The ohmic contact layer is composed of an electrode and a reflective film, and the bonding metal layer includes the ohmic contact layer inside it. The bonding metal layer is composed of a seed metal layer and a conductive bonding layer, and the ceramic substrate is laminated on the top of the bonding metal layer.