OPERATING METHODS OF NON-VOLATILE MEMORY DEVICES

摘要

PURPOSE: An operation method of a non-volatile memory device for improving reliability without using channel boosting is provided to improve operation reliability of non-volatile memory device by preventing a single channel effect. CONSTITUTION: An operation method of a non-volatile memory device for improving reliability without using channel boosting is as follows. The non-selection bit lines for the selection bit line are set among bit line. Program voltage is applied on word line selected among word lines. The program voltage is authorized to the word line selected among word lines. The memory transistor combined with the selected word line within the selection bit line is programmed.