发明名称 |
MANUFACTURING METHOD FOR LIGHT-EMITTING DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a light-emitting device of high definition, high light-emitting characteristics and long life which can form a desired evaporation pattern while preventing a material layer used as a transcription layer from excessively being evaporated and by using a method wherein deterioration of materials or the like is hardly caused during transcription. <P>SOLUTION: In the manufacturing method for a light-emitting device, the material layer on a first substrate as a substrate used for evaporation is pattern-formed by irradiating first light, and the pattern-formed material layer can be evaporated on a second substrate as a deposited substrate by irradiating second light. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009272301(A) |
申请公布日期 |
2009.11.19 |
申请号 |
JP20090095766 |
申请日期 |
2009.04.10 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
IKEDA TOSHIO;IBE TAKAHIRO |
分类号 |
H05B33/10;G09F9/30;H01L27/32;H01L51/50 |
主分类号 |
H05B33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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