发明名称 |
ABRASIVE, SUBSTRATE POLISHING METHOD USING SAME, AND SOLUTION AND SLURRY FOR USE IN THIS METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive which is capable of achieving both the reduction of polishing scratches and an excellent polishing speed in a sufficiently high level and gives a sufficiently high polishing speed ratio between a target film to be polished and a stopper film, in CMP techniques for polishing the target film formed on a surface of a substrate. <P>SOLUTION: The abrasive contains cerium oxide particles and an additive, wherein the additive contains a compound having an amide structure and a carboxyl group. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2009272601(A) |
申请公布日期 |
2009.11.19 |
申请号 |
JP20080271275 |
申请日期 |
2008.10.21 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
HOSHI YOSUKE;SATO HIDEKAZU;OTA MUNEHIRO;RYUZAKI DAISUKE;NOBE SHIGERU;ENOMOTO KAZUHIRO |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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