发明名称 ABRASIVE, SUBSTRATE POLISHING METHOD USING SAME, AND SOLUTION AND SLURRY FOR USE IN THIS METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an abrasive which is capable of achieving both the reduction of polishing scratches and an excellent polishing speed in a sufficiently high level and gives a sufficiently high polishing speed ratio between a target film to be polished and a stopper film, in CMP techniques for polishing the target film formed on a surface of a substrate. <P>SOLUTION: The abrasive contains cerium oxide particles and an additive, wherein the additive contains a compound having an amide structure and a carboxyl group. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009272601(A) 申请公布日期 2009.11.19
申请号 JP20080271275 申请日期 2008.10.21
申请人 HITACHI CHEM CO LTD 发明人 HOSHI YOSUKE;SATO HIDEKAZU;OTA MUNEHIRO;RYUZAKI DAISUKE;NOBE SHIGERU;ENOMOTO KAZUHIRO
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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