| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film on a gate oxide film, wherein the method solves at least one of the problems in prior arts. SOLUTION: The method for forming a silicon nitride film on a gate oxide film as a part of forming a gate structure in semiconductor devices includes a step of forming a layer of silicon nitride on the upper part of a gate oxide film of a semiconductor substrate by a nitriding treatment process, a step of heating the semiconductor substrate in an annealing chamber, a step of exposing the semiconductor substrate to N<SB>2</SB>in the annealing chamber, and a step of exposing the semiconductor substrate to a mixture of N<SB>2</SB>and N<SB>2</SB>O in the annealing chamber. COPYRIGHT: (C)2010,JPO&INPIT
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