发明名称 |
HIGH THROUGHPUT PROCESSES AND SYSTEMS FOR BARRIER FILM DEPOSITION AND/OR ENCAPSULATION OF OPTOELECTRONIC DEVICES |
摘要 |
Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.
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申请公布号 |
US2009286010(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20080122326 |
申请日期 |
2008.05.16 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
ERLAT AHMET GUN;DUGGAL ANIL RAJ;YAN MIN |
分类号 |
C23C16/513;B05D5/12 |
主分类号 |
C23C16/513 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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