发明名称 Memory interface circuit and memory system including the same
摘要 The memory interface circuit may include a master delay unit and a slave delay unit. The master delay unit generates a control signal for controlling a delay time based on a clock signal. The slave delay unit selects one signal of an inversion signal of the clock signal and a data strobe signal in response to a mode signal and delays the selected signal in response to the control signal. The slave delay unit selectively outputs a delayed clock signal that may be delayed by a first phase with respect to the clock signal or a delayed data strobe signal that may be delayed by a second phase with respect to the data strobe signal.
申请公布号 US2009285042(A1) 申请公布日期 2009.11.19
申请号 US20090453523 申请日期 2009.05.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHAE KWAN-YEOB
分类号 G11C7/00;G11C8/00 主分类号 G11C7/00
代理机构 代理人
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