发明名称 THIN FILM TRANSISTOR, OPTICAL SENSOR CIRCUIT PROVIDED WITH THIN FILM TRANSISTOR, AND DISPLAY DEVICE
摘要 <p>A thin film transistor (1) is to be used in a path wherein a current direction is fixed to one direction and provided with high-concentration impurity regions (3, 4) on the both sides of a channel region (5). The thin film transistor has a structure wherein a low-concentration impurity region (6) is sandwiched only between the high-concentration impurity region (3), which is on a side to which a carrier corresponding to the polarity of the high-concentration impurity regions (3, 4) flows in accordance with the direction of the current, and the channel region (5). Thus, the thin film transistor, which on/off controls output of an optical sensor incorporated in pixels constituting a display screen of a display device and has the structure not easily affected by a display signal, is provided.</p>
申请公布号 WO2009139204(A1) 申请公布日期 2009.11.19
申请号 WO2009JP52499 申请日期 2009.02.16
申请人 JP 发明人 BROWN, CHRIS;TANAKA, KOHHEI;KATOH, HIROMI
分类号 H01L29/786;G09F9/30;H01L21/336;H01L27/146;H01L31/10 主分类号 H01L29/786
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