SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes: an internal transistor and an I/O transistor. The internal transistor includes: a first gate electrode (103a); a first impurities region (106a) containing first impurities; and a first inner side wall spacer (107a) and a first outer side wall spacer (109a) formed on the side surface of the first gate electrode. The I/O transistor includes: a second gate electrode (103b); a second impurities region (106b) containing the second impurities of the same conductive type as the first impurities; and a second inner side wall spacer (107b) and a second outer side wall spacer (109b) formed on the side surface of the second gate electrode (103b). The second inner side wall spacer (107b) contains second impurities at the boundary with the second outer side wall spacer (109b).