Method of manufacturing single crystalline gallium nitride thick film

摘要

A method of manufacturing a single crystalline gallium nitride (GaN) thick film by using a hydride gas phase epitaxy (HVPE), more particularly, the method of manufacturing c-plane ({0001}) of a single crystalline GaN thick film by using the HVPE. A GaN film is grown on a substrate by providing a hydrogen chloride (HCl) gas and an ammonia (NH 3 ) gas, thereby obtaining the GaN film on the substrate, and a GaN thick film on the GaN film on the substrate is grown.