发明名称 |
SEMICONDUCTOR LASER DEVICE |
摘要 |
A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 mum>=W2>=60 mum are satisfied.
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申请公布号 |
US2009285254(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20090392452 |
申请日期 |
2009.02.25 |
申请人 |
TAKAYAMA TORU;NAGAI HIROKI;SATO HITOSHI;SATOH TOMOYA;KIDOGUCHI ISAO |
发明人 |
TAKAYAMA TORU;NAGAI HIROKI;SATO HITOSHI;SATOH TOMOYA;KIDOGUCHI ISAO |
分类号 |
H01S5/026 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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