| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces manufacture defects such as braking of back wiring and has a through electrode stably securing insulation between the back wiring and a semiconductor substrate. SOLUTION: The semiconductor substrate is prepared which has a surface electrode formed. The semiconductor substrate is etched from the reverse surface side to form a through-hole reaching the surface electrode, and simultaneously from the reverse side to form a trench enclosing a periphery of the through-hole. The trench constitutes an insulating ring. Then a photosensitive resin film is stuck on the reverse surface of the semiconductor substrate. A part of the photosensitive resin film which corresponds to the formation part of the through-hole is selectively removed through exposure development processing. A conductor is deposited on an inner wall of the through-hole which is exposed from an opening portion and a surface of the photosensitive resin film. The through electrode and semiconductor substrate are insulated by the insulating ring having a hollow structure. COPYRIGHT: (C)2010,JPO&INPIT |
