| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device that achieves a performance of distributed feedback more efficiently using ultrasonic waves. <P>SOLUTION: A semiconductor laser device 1 includes a semiconductor substrate 10, a semiconductor laminate 20 provided on the semiconductor substrate and having a laser structure 27 including active layers 23A and 23B and a contact layer 28 provided on the laser structure, and a means 30 for supplying ultrasonic waves propagating in the direction of the optical axis of the laser structure to the semiconductor laminate, wherein the laser structure has absorption loss layers 22A and 22B for absorbing at least a portion of the light emitted from the active layers and propagated, and when the laser structure consists only of the active layers, the active layers are arranged in the first region out of first and second regions in the laser structure in the direction intersecting the major surface 10a of the semiconductor substrate 10 substantially perpendicularly and having variation patterns of carrier density incident to propagation of ultrasonic waves opposite from each other, and the absorption loss layers are arranged in the second region. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
