发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent incorrect readout due to capacitance coupling between wires. <P>SOLUTION: Selective gate wires SG1 (149) are disposed in blocks BLOCKi-1 and BLOCKi, respectively. A contact portion X1 for the selective gate wire SG1 (149) in the block BLOCKi-1 is formed in a shunt area QQ. A selective gate bypass wire 21i-1, which is connected to the selective gate wire SG1 (149) in the block BLOCKi-1, is disposed in the block BLOCKi adjacent to the block BLOCKi-1. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009272648(A) 申请公布日期 2009.11.19
申请号 JP20090187679 申请日期 2009.08.13
申请人 TOSHIBA CORP 发明人 NAKAMURA HIROSHI;OHIRA HIDEKO;IMAMIYA KENICHI;TAKEUCHI TAKESHI;ARITOME SEIICHI
分类号 H01L21/8247;G11C16/04;G11C16/06;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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