| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive composition for polishing with which a flat surface of an insulating layer having embedded metal wiring can be obtained in polishing of a surface to be polished in manufacture of a semiconductor integrated circuit device. <P>SOLUTION: The abrasive composition for polishing used to polish the surface to be polished of the semiconductor integrated circuit device contains silica particles, a compound represented by formula (1) (where R2 and R3 are each independently a hydrogen atom, an alkyl group of C1-4, an alkoxy group of C1-4, carboxylic acid or an amino group), pullulan, and a basic compound, pH of the abrasive composition being 8 to 11. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
