发明名称 METHOD FOR DEPOSITING FILM BY PLASMA CVD METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for depositing a film by plasma CVD method which prolongs the continuous film deposition time period by supplying gas from a shower head electrode. Ž<P>SOLUTION: A film is deposited on the surface of a substrate 60 by plasma CVD method by applying a radio frequency from a high frequency power supply 16 between a holding electrode 30 for supporting the substrate 60 and a shower head electrode 14, supplying first gas from the shower head electrode 14 to the substrate 60, and supplying second gas from a gas supply pipe 50 to the surface of the substrate 60. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009272330(A) 申请公布日期 2009.11.19
申请号 JP20080118967 申请日期 2008.04.30
申请人 FUJIFILM CORP 发明人 TONOHARA KOUJI
分类号 H01L21/31;C23C16/455 主分类号 H01L21/31
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