| 摘要 |
A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, the dielectric layer having a groove for exposing the isolation layer, a trench formed on the isolation layer and exposed through the groove, and a second conductive layer formed over the dielectric layer the trench.
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