PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a means for controlling a temperature of a semiconductor wafer upon large input heat etching b the use of a cooling method based on the heat of vaporization in a high-speed and in-plane uniform manner. SOLUTION: An annular coolant passage 2 is formed in a specimen base 1. Since a heat transfer coefficient of a coolant and a pressure loss thereof are increased together with dryness as the coolant advances from a coolant supply port 3 to a coolant discharge port 4, it is necessary to suppress these increases. To avoid this, the quantity of a coolant to be supplied is controlled and the cross-sectional surface area of the coolant passage 2 is increased sequentially from a first passage 2-1 toward a third passage 2-3 so that the coolant in the coolant passage 2 is not completely evaporated. This enables a heat transfer coefficient to be constant in the coolant in the coolant passage 2, and the pressure loss to be also suppressed. COPYRIGHT: (C)2010,JPO&INPIT