SUBSTRATE TREATMENT METHOD

摘要

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment method for forming a silicon nitride film having a small etching rate to an HF-based solution. Ž<P>SOLUTION: Bistertiarybutylaminosilane gas and ammonium gas are supplied into a treatment chamber 201 for storing a heated substrate 200. A silicon nitride film 304 is formed on the substrate by a CVD method. The substrate where the silicon nitride film is formed is heat-treated under an atmosphere of not less than 800°C. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž