发明名称 METHOD OF FORMING SCRIBE LINE ON SEMICONDUCTOR WAFER, AND SCRIBE LINE FORMING DEVICE
摘要 <p>A silicon wafer 50 including a plurality of semiconductor devices patterned on a top surface thereof as a result of a wafer production process is prepared. A transparent film is applied on the top surface of the semiconductor wafer 50 so as to cover all the plurality of semiconductor devices. The semiconductor wafer with the transparent film is placed on a rotatable table 26 such that a rear surface of the semiconductor wafer not covered with the transparent film is facing up away from the rotatable table 26. The rear surface of the semiconductor wafer 50 is heated with a laser beam to form a laser spot, along a scribe line formation line for dividing the semiconductor wafer into a plurality of semiconductor chips, to a temperature lower than a softening point of the semiconductor wafer, while an area close to the laser spot is continuously cooled along the scribe line formation line. <IMAGE></p>
申请公布号 EP1441385(A4) 申请公布日期 2009.11.18
申请号 EP20020770283 申请日期 2002.10.28
申请人 MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD. 发明人 WAKAYAMA, H.
分类号 H01L21/301;B23K26/00;B23K26/073;B23K26/40;B28D1/22;B28D5/00;H01L21/68 主分类号 H01L21/301
代理机构 代理人
主权项
地址