发明名称 |
METHOD FOR MANUFACTURING SELF-SUPPORTING NITRIDE SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>The present invention provides a method for manufacturing a nitride semiconductor self-supporting substrate and a nitride semiconductor self-supporting substrate manufactured by this manufacturing method, the method including at least: a step of preparing a nitride semiconductor self-supporting substrate serving as a seed substrate; a step of epitaxially growing the same type of nitride semiconductor as the seed substrate on the seed substrate; and a step of slicing an epitaxially grown substrate subjected to the epitaxial growth into two pieces in parallel to an epitaxial growth surface. As a result, there is provided a method for manufacturing a large-diameter nitride semiconductor self-supporting substrate having an excellent crystal quality and small warp with good productivity at a low cost, etc.</p> |
申请公布号 |
EP2119815(A1) |
申请公布日期 |
2009.11.18 |
申请号 |
EP20070849786 |
申请日期 |
2007.12.05 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
TAKAMIZAWA, SHOICHI;WATANABE, MASATAKA |
分类号 |
C30B25/02;C23C16/448;C30B29/40;H01L21/02;H01L33/32 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|