METHOD OF PRODUCING HIGHLY STRAINED PECVD SILICON NITRIDE THIN FILMS AT LOW TEMPERATURE,申请号EP20060748845-传众专利搜索

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发明名称	METHOD OF PRODUCING HIGHLY STRAINED PECVD SILICON NITRIDE THIN FILMS AT LOW TEMPERATURE
摘要
申请公布号	EP1864319(A4)	申请公布日期	2009.11.18
申请号	EP20060748845	申请日期	2006.03.29
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	BELYANSKY, MICHAEL, P.;GLUSCHENKOV, OLEG;LI, YING;MALLIKARJUNAN, ANUPAMA
分类号	H01L21/26	主分类号	H01L21/26
代理机构		代理人
主权项
地址

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