| 摘要 |
<p>A single crystal silicon thin film having a high electron/hole mobility is uniformly formed at a relatively low temperature, so that production of an active matrix substrate having a built-in high performance driver and an electrooptical apparatus, such as a thin film semiconductor apparatus for display, becomes possible. A single crystal silicon layer is formed by hetero-epitaxial growth from a molten liquid layer of a low melting point metal having silicon dissolved therein by using a crystalline sapphire film formed on a substrate as a seed, and the single crystal silicon layer is used in a top gate type MOS TFT of an electrooptical apparatus, such as an LCD, in which a display part and a peripheral driving circuit are integrated.</p> |
