| 摘要 |
A method for manufacturing an LCD(Liquid Crystal Display) is provided to form an active pattern and a storage electrode through a single mask process, thereby decreasing the number of masks used for manufacturing the LCD. A poly silicon thin film pattern is formed on a substrate(110). An impurity-doping process is selectively performed on the poly silicon thin film pattern, thereby forming an active pattern(124') and a storage pattern. A first insulating layer(115a) and a first conductive film are sequentially deposited on the resultant substrate. The first conductive film is selectively etched to form a gate electrode(121) above the active pattern and a common line(108) above the storage pattern. Herein, the common line and the storage pattern constitute a first storage capacitor with the first insulating layer therebetween. An impurity-doping process is selectively performed on the resultant substrate to form a source region(124a), a drain region(124b), and a channel region(124c). A second insulating layer(115b) is formed on the resultant substrate. A first contact hole for exposing the source region and a second contact hole for exposing the drain region are formed in the second insulating layer. A source electrode(122) and a drain electrode(123) are formed on the second insulating layer, wherein the source electrode is electrically connected to the source region through the first contact hole and the drain electrode is electrically connected to the drain region through the second contact hole. Herein, the drain electrode and the common line constitute a second storage capacitor with the second insulating layer therebetween. A third insulating layer(115c) is formed on the resultant substrate. A third contact hole for exposing the drain electrode is formed in the third insulating layer. A pixel electrode(118) is formed on the third insulating layer, wherein the pixel electrode is electrically connected to the drain electrode through the third contact hole. |
