发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device. |
申请公布号 |
EP2118933(A1) |
申请公布日期 |
2009.11.18 |
申请号 |
EP20070705686 |
申请日期 |
2007.01.10 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
EVGUENIY, STEFANOV N;DERAM, IVANA;REYNES, JEAN-MICHEL |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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