发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
摘要 A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
申请公布号 EP2118933(A1) 申请公布日期 2009.11.18
申请号 EP20070705686 申请日期 2007.01.10
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 EVGUENIY, STEFANOV N;DERAM, IVANA;REYNES, JEAN-MICHEL
分类号 H01L29/78;H01L21/336;H01L29/06;H01L29/423 主分类号 H01L29/78
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