发明名称 REVERSE OXIDATION POST-GROWTH PROCESS FOR TAILORED GAIN PROFILE IN SOLID-STATE DEVICES
摘要 <p>A laser rod is provided having a tailored gain profile such that the quality of the output beam is enhanced. The laser rod has a concentration of active substitutional ions that is relatively high at the center of the rod and decreases to the surface of the rod. The laser rod further has a concentration of pre-active laser ions that is relatively high at the surface of the rod and decreases to the center of the rod. Methods are disclosed for creating a layer of inactive laser species in the near surface region of a laser rod using substitutional dopant ions and for creating a laser rod with a tailored gain profile such that the quality of the output beam is enhanced.</p>
申请公布号 IL197037(D0) 申请公布日期 2009.11.18
申请号 IL20090197037 申请日期 2009.02.12
申请人 RAYTHEON COMPANY 发明人
分类号 C30B 主分类号 C30B
代理机构 代理人
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