SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to easily form a low resistance contact layer without a doping process by lowering a schottky barrier in bonding a high mobility oxide semiconductor and a metal wiring layer. CONSTITUTION: An oxide semiconductor layer(103) is formed. A first conductive layer is formed on the oxide semiconductor layer, and includes a first component and a second component. Gibbs free energy for forming the oxide of the second component is higher than the first component. A second conductive layer including the second component is formed on the first conductive layer. The first component is oxidized in an interface region between the first conductive layer and the second conductive layer.