| 摘要 |
<p>PURPOSE: A method for forming a hard mask pattern of a semiconductor device is provided to stably form a thin film pattern of a minute line width by improving increase of an aspect ratio through a hard mask pattern. CONSTITUTION: A first hard mask film(105) including an oxide film is formed on a semiconductor substrate(101) in which an etching object film is formed. A second hard mask film including a metal oxide film is formed on the semiconductor substrate in which the first hard mask film is formed. The second hard mask film is etched. The first hard mask film is etched by using the second hard mask film as an etching mask.</p> |
