| 摘要 |
PROBLEM TO BE SOLVED: To allow a uniform gettering effect to be obtained in a wafer plane even if a silicon wafer is cut from an ingot including a perfect region (P). SOLUTION: The silicon wafer is manufactured by forming a polysilicon layer having a thickness of 0.1 to 1.6μm on the backside of a mirror plane silicon wafer after drawing up the ingot adding pure carbon to a polycrystal silicon raw material so as to provide the carbon concentration in the ingot with 1 to 5×10<SP>15</SP>/cm<SP>3</SP>, and by controlling V/G(mm<SP>2</SP>/min°C) so as to provide the oxygen concentration in the ingot with 1×10<SP>18</SP>to 1.45×10<SP>18</SP>/cm<SP>3</SP>(old ASTM), and also include both a region (P<SB>V</SB>) and a region (P<SB>I</SB>) with an area ratio of region (P<SB>V</SB>)/region (P<SB>I</SB>) at about 1. COPYRIGHT: (C)2008,JPO&INPIT
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