| 摘要 |
<p>A semiconductor device is provided to avoid a decrease of a channel length caused by a horn by rounding the edge portion of an active region in contact with an isolation region by a LOCOS(LOCal Oxidation of Silicon) process. A semiconductor substrate(200) has an active region including a gate formation region, a bitline contact region and a storage node contact region. An isolation layer is formed in the semiconductor substrate to confine an active region, having a greater height than the active region. A silicon epitaxial layer(214) is formed on the bitline contact region and the storage node contact region of the active region. A recess gate(222) is formed on the gate formation region of the active region between the silicon epitaxial layers. A junction region is formed in the surface of the silicon epitaxial layer. Both edges of the active region in the direction of the gate formation region have a downward bend profile. The silicon epitaxial layer can have a thickness of 300-1200 Å. The junction region can have a depth of 150-600 Å from the surface of the silicon epitaxial layer.</p> |
