Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus

摘要

In a surface emitting laser element (100), on a substrate (101) whose normal direction of a principal surface is inclined, a resonator structural body including an active layer (105), and a lower semiconductor DBR (103) and an upper semiconductor DBR (107) sandwiching the resonator structural body are stacked. A shape of a current passing through region (108b) in an oxide confinement structure of the upper semiconductor DBR (107) is symmetrical to an axis passing through a center of the current passing through region (108b) parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region (108b) parallel to a Y axis, and a length of the current passing through region (108b) is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer (108a) surrounding the current passing through region (108b) is greater in the -Y direction than in the +X and -X directions.