| 摘要 |
A semiconductor device is provided to improve gate current driving capability while increasing the threshold voltage of a gate by implanting p-type impurity ions into a gate polysilicon layer and by forming an epitaxial growth layer on an active region before a source/drain region is formed. A semiconductor substrate(100) includes an isolation layer(130) for defining an active region(120). A predetermined depth of the active region overlapping a gate formation region is etched to form a recess gate region(140). The isolation layer overlapping the gate formation region is more etched than the depth of the recess gate region by a predetermined depth to form a trench(145) for a fin cell. A gate(160) is formed in the recess gate region and the gate formation region on the trench for the fin cell, including a polysilicon layer into which p-type impurities are implanted, a gate metal layer(154) and a gate hard mask layer(156). An epitaxial growth layer(180) is formed in the active region between the gates. A source/drain region is formed in the epitaxial growth layer and the active region under the epitaxial growth layer. N-type impurity ions can be implanted into the source/drain region.
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