发明名称 |
ZNO-BASED SEMICONDUCTOR ELEMENT |
摘要 |
Provided is a ZnO semiconductor element which uses a ZnO semiconductor and an organic material for active functions and has a completely novel function different from conventional functions. An organic electrode (2) is formed on a ZnO semiconductor (1), and an Au film (3) is formed on the organic electrode (2). On the rear surface of the ZnO semiconductor (1), an electrode made of a multilayer metal film composed of a Ti film (4) and an Au film (5) is formed to face the organic electrode (2). A bonding interface between the organic electrode (2) and the ZnO semiconductor (1) is in a pn-junction-like state, and rectification is generated between the electrode and the semiconductor. |
申请公布号 |
KR20090118947(A) |
申请公布日期 |
2009.11.18 |
申请号 |
KR20097018358 |
申请日期 |
2008.02.04 |
申请人 |
ROHM CO., LTD. |
发明人 |
NAKAHARA KEN;YUJI HIROYUKI;KAWASAKI MASASHI;OHTOMO AKIRA;TSUKAZAKI ATSUSHI;FUKUMURA TOMOTERU;NAKANO MASAKI |
分类号 |
H01L29/22;H01L21/28;H01L21/338;H01L29/423;H01L29/47;H01L29/778;H01L29/812;H01L29/872;H01L31/10 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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