发明名称 ZNO-BASED SEMICONDUCTOR ELEMENT
摘要 Provided is a ZnO semiconductor element which uses a ZnO semiconductor and an organic material for active functions and has a completely novel function different from conventional functions. An organic electrode (2) is formed on a ZnO semiconductor (1), and an Au film (3) is formed on the organic electrode (2). On the rear surface of the ZnO semiconductor (1), an electrode made of a multilayer metal film composed of a Ti film (4) and an Au film (5) is formed to face the organic electrode (2). A bonding interface between the organic electrode (2) and the ZnO semiconductor (1) is in a pn-junction-like state, and rectification is generated between the electrode and the semiconductor.
申请公布号 KR20090118947(A) 申请公布日期 2009.11.18
申请号 KR20097018358 申请日期 2008.02.04
申请人 ROHM CO., LTD. 发明人 NAKAHARA KEN;YUJI HIROYUKI;KAWASAKI MASASHI;OHTOMO AKIRA;TSUKAZAKI ATSUSHI;FUKUMURA TOMOTERU;NAKANO MASAKI
分类号 H01L29/22;H01L21/28;H01L21/338;H01L29/423;H01L29/47;H01L29/778;H01L29/812;H01L29/872;H01L31/10 主分类号 H01L29/22
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