| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a single crystal in which contaminants such as carbon and heavy metals permeate in a small amount and into a shallow depth. SOLUTION: The apparatus 1 for producing a single crystal comprises: a crucible 2 for housing a raw material melt 4 of a single crystal 7 to be grown; a heater 3 for heating the melt 4; a pull-up means 5 for making a seed crystal 6 contact with the surface of the melt 4 in the crucible 2 to grow the single crystal 7; a radiant heat shielding screen 8 having a tapered surface 8a surrounding the periphery of a pull-up area for the single crystal 7; a chamber 9 for housing each of the members; and a means for supplying inert gas from the upper part of the chamber 9. A flow path 31 of the inert gas is divided at the upper part of the radiant heat shielding screen 8, and includes a first flow path flowing into the tapered surface 8a and a second flow path flowing along the outer periphery of the radiant heat shielding screen 8. COPYRIGHT: (C)2009,JPO&INPIT
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