| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent the damage of a photoresist by performing double exposure to the photoresist of double structure consisting of positive and negative so that a contact hole pattern is formed. A method for manufacturing a semiconductor device comprises: a step for successively coating a negative photoresist(13) and a positive photoresist(14) on a semiconductor substrate(11); a step for performing first exposure by using a first reticle as a mask to the positive photoresist coated on the substrate; a step for performing second exposure by using a second reticle as a mask to the negative photoresist coated on the substrate; and a step for forming a photoresist pattern by performing a photolithography process to the substrate coated with the positive and negative photoresists.</p> |
