SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

The semiconductor memory device and the method of forming the same are provided to prevent the damage of metal silicide layer by the etching solution and to increase the contact area between the storage contact and the storage contact pad. The semiconductor memory device comprises the first interlayer insulating film(110) on the semiconductor substrate; the bit line(Bl) arranged on the first interlayer insulating film; the bit line contact pad which is electrically connected to the bit line, and is arranged in the first interlayer insulating film; the storage contact pad(122) arranged in the first interlayer insulating film. The upper side of the bit line contact pad is lower than that of the upper side of the storage contact pad.