METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE

摘要

A method for manufacturing a thin film transistor and a display device is provided to manufacture a thin film transistor having good electrical properties and a small off current. A dopant semiconductor layer is etched on a semiconductor layer to expose a part of a semiconductor(106) in order to form a back channel unit on the thin film transistor. A part of a back channel unit is etched by non-bias. A part of the back channel unit is etched by CI2 gas. A part of the back channel unit is etched by pulse discharging. The semiconductor layer comprises a fine crystal semiconductor layer and a laminate of a non crystal semiconductor layer. The non crystal semiconductor layer is provided to a side contacted with the dopant semiconductor layer of the semiconductor layer.