发明名称 HIGH CURRENT CAPACITY INNER LEADS FOR SEMICONDUCTOR DEVICE
摘要 The invention can be used for improving performance of laser diodes, solar cells, microprocessors and other devices. The invention enables to create semiconductor devices having a great area of die, a great number of leads, a high operating current and a high heat dissipation. This is achieved by the following manner: offered leads are made of copper foil; the rigidity of the foil is decreased by means of disposing of alternating parallel narrow trenches on both sides of the foil; the offered leads are microspring; additional decreasing of rigidity can be achieved by the bending of foil along wide trenches that are created for this aim. Offered leads can be directly connected to the die.
申请公布号 IL196635(D0) 申请公布日期 2009.11.18
申请号 IL20090196635 申请日期 2009.01.21
申请人 SOLOMON EDLIN 发明人
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代理机构 代理人
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